 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FDP8878 N-Channel PowerTrench(R) MOSFET November 2005 FDP8878 N-Channel Logic Level PowerTrench(R) MOSFET 30V, 40A, 15m General Descriptions This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Features rDS(ON) = 15m, VGS = 10V, ID = 40A rDS(ON) = 19m, VGS = 4.5V, ID = 36A High performance trench technology for extremely low rDS(ON) Low gate charge High power and current handling capability RoHS Compliant D DRAIN (FLANGE) SOURCE DRAIN GATE G TO-220AB FDP SERIES D MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDSS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 4.5V) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Operating and Storage Temperature (Note 4) L = 1mH, IAS = 11A L = 43H,IAS = 32A Continuous (TC = 25oC, VGS = 10V) 40 36 141 60 22 40.5 -55 to 175 A A A mJ W o Ratings 30 20 Units V V C Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case (Note 2) Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 3.7 43 oC/W o C/W Package Marking and Ordering Information Device Marking FDP8878 Device FDP8878 Package TO-220 Reel Size Tube Tape Width n/a Quantity 45 units (c)2005 Fairchild Semiconductor Corporation FDP8878 Rev. A 1 www.fairchildsemi.com FDP8878 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, Referenced to 25oC VDS = 24V VGS = 0V VGS = 20V TA = 150oC 30 21 1 250 100 V mV/oC A nA On Characteristics VGS(TH) VGS(TH) TJ rDS(ON) Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 250A ID = 250A, Referenced to 25oC ID = 40A, VGS = 10V Drain to Source On Resistance ID = 36A, VGS = 4.5V ID = 40, VGS = 10V, TA = 175oC 1.2 1.7 -5 12 16 20 15 19 25 m 2.5 V mV/oC Dynamic Characteristics CISS COSS CRSS RG Qg(TOT) Qg(5) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Total Gate Charge at 5V Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz VGS = 0V to 10V VDD = 15V VGS = 0V to 5V ID = 40A Ig = 1.0mA 927 188 1130 3.0 17.1 9.2 2.6 1.7 3.7 23 12 1235 250 175 pF pF pF nC nC nC nC nC Switching Characteristics (VGS = 10V) tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 15V, ID = 40A VGS = 10V, RGS = 16 255 11.1 244 14.8 35.3 50 75 383 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 40A ISD = 3.2A ISD = 40A, dISD/dt=100A/s ISD = 40A, dISD/dt=100A/s 1.1 0.85 14.4 5.1 1.25 1.2 18.8 6.7 V V ns nC Notes: 1: Starting TJ = 25C, VDD = 30V, VGS = 10V 2: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. 3: RJA is measured with 1.0 in2 copper on FR-4 board 4: Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 2 FDP8878 Rev. A www.fairchildsemi.com FDP8878 N-Channel PowerTrench(R) MOSFET Typical Characteristics TA = 25C unless otherwise noted 80 RDS(ON), NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 10V 70 ID, DRAIN TCURRENT (A) 60 50 40 30 20 10 0 0 0.4 0.8 1.2 1.6 2.0 VDS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 3.0V 3.5V 5.0V 4.0V 4.5V 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 20 40 60 80 ID, DRAIN CURRENT (A) 5.0V 3.5V 4.0V 3.0V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 4.5V 10V Figure 1. On Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.06 RDS(ON), ON-RESISTANCE (OHM) 1.7 RDS(ON), NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = 40A VGS =10V ID =40A 0.05 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1.5 1.3 0.04 1.1 0.03 TJ =175oC 0.03 TJ =25oC 0.01 2 4 6 8 0.9 0.7 - 80 - 40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 160 200 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On Resistance Variation with Temperature 80 70 ID, DRAIN TCURRENT (A) 60 50 40 30 20 10 0 1.0 2.0 3.0 TA = 175oC PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX Figure 4. On-Resistance Variation with Gate-to-Source Votlage 100 VGS = 0V 10 IS, REVERSE CURRENT (A) VDS = 6V 1.0 TA = 175oC 0.1 TA = 25oC TA = 25oC TA = -55oC 0.01 TA = - 55oC 0.001 4.0 5.0 0 0.3 0.6 0.9 1.2 1.5 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation With Source Current and Temperature 3 FDP8878 Rev. A www.fairchildsemi.com FDP8878 N-Channel PowerTrench(R) MOSFET Typical Characteristics TA = 25C unless otherwise noted 10 VDD =15V VGS, GATE- SOURCE VOLTAGE 8 CAPACITANCE (pF) 1000 COSS CRSS 100 CISS 10000 f = 1MHz VGS = 0V 6 4 WAVEFORMS IN ASCENDING ORDER: ID = 40A ID = 1A 2 0 0 4 8 12 16 20 Qg, GATE CHARGE (nC) 10 0.1 10 1 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics 500 Figure 8. Capacitance Characteristics 1000 SINGLE PULSE TJ = MAX RATED TC = 25oC 100 IAS, AVALANCHE CURRENT (A) 100 STARTING TJ = 25oC 10 ID, DRAIN TCURRENT (A) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 1/4 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 10 10s OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) STARTING TJ = 150oC 100s 1ms DC 1 0.001 0.01 0.1 1 10 100 1 0.1 tAV, TIME IN AVALANCHE (ms) 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 9. Unclamped Inductive Switching Capability 45 40 ID, DRAIN TCURRENT (A) 35 30 25 20 15 10 5 0 0 50 75 100 125 150 175 VDS, GATE TO SOURCE VOLTAGE (V) RJC = 3.7oC/W VGS = 4.5V VGS = 10V P(PK), PEAK TRANSIENT POWER (W) 10000 Figure 10. Safe Operating Area 1000 SINGLE PULSE RJC = 0.5oC/W TJ = 25oC 100 10 10-5 10-4 10-3 10-2 10-1 100 101 t, PULSE WIDTH (s) Figure 11. Maximum Continuous Drain Current vs Case Temperature Figure 12. Single Pulse Maximum Power Dissipation 4 FDP8878 Rev. A www.fairchildsemi.com FDP8878 N-Channel PowerTrench(R) MOSFET 2 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x RJC + TC 10-3 10-2 t, RECTANGULAR PULSE DURATION (s) 10-1 100 101 ZJC, NORMALIZED THERMAL IMPEDANCE SINGLE PULSE 0.01 10-5 10-4 Figure 13. Transient Thermal Response Curve 5 FDP8878 Rev. A www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17 |
Price & Availability of FDP8878
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |